Toshiba power transistor semiconductor data book 1983 toshiba corporation 1983 acrobat 7 pdf 52. Hi, working on a project, i am told to find the k,n value of a specific transistor 2n7000, given the spec. December 2003 sjh00018ded 1 unr411x series un411x series silicon pnp epitaxial planar type for digital circuits features costs can be reduced through downsizing of the equipment and reduction of the number of parts new s type package, allowing supply with the radial taping. Tn3019 ns transistors bjt single kynix semiconductor. Multimec 1h1d smd 2a 3 pin dk2750 3atl680 3atl640 3atl620 1k1116 unimec text. Nte 67 mosfet nch hi speed transistor by nte electronics. Ne85633r25a transistor npn 1ghz sot23 nec datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Low frequency transistor 20v, 3a 2sd2150 zfeatures zdimensionsunit. Symbol parameter conditions value unit rth ja thermal resistance from junction to. May 02, 2016 c3209 datasheet pdf npn transistor nec, 2sc3209 datasheet, c3209 pdf, c3209 pinout, c3209 equivalent, c3209 transistor, c3209 schematic, c3209 manual.
Ne85633r25a transistor npn 1ghz sot23 nec datasheet pdf. Marking of electronic components, smd codes kn, kn. Power transistors 2sc1846 datasheet catalog for integrated. Toshiba power transistor semiconductor data book 1983. Kn value of a specific transistor given spec sheet. Ne567 datasheet, ne567 pdf, ne567 data sheet, ne567 manual, ne567 pdf, ne567, datenblatt, electronics ne567, alldatasheet, free, datasheet, datasheets, data sheet. Npn highvoltage transistor bf859 description npn transistor in a to202 plastic package. Book depository books with free delivery worldwide. D absolute maximum rating parameter symbol ratings unit collectorbase voltage v cbo220 v collectoremitter voltage v ceo200 v emitterbase voltage v ebo6 v peak pulse current i cpeak5 a continuous collector current i c2 a.
I,d k,n v,gs v,tn2 im close, from the spec sheet, i can use a v,gs value and a corresponding i,d value, however not sure what. Precise test data, for each transistor is provided with each order. Npn highvoltage transistor bf820w features low current max. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. St 2sc828 828a npn silicon epitaxial planar transistor for switching and af amplifier applications. Texas instruments transistor and diode databook 1st ed 1973 datasheets for diodes from 1n251 on and transistors from 2n117 on acrobat 7 pdf 34. Toshiba field effect transistor silicon n channel mos type. Whilst we are continuing to ship customer orders, same day dispatch is not guaranteed.
Npn highvoltage transistor bf419 package outline unit bp cde e1lq w outline references version european projection issue date iec jedec eiaj mm 0. Toshiba, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Its primary function is to drive a load whenever a sustained frequency within its detection band is present at the self. Basic semiconductor physics, diodes, the nonlinear diode model, load line analysis, large signal diode models, offset diode model, transistors, large signal bjt model, load line analysis, small signal model and transistor amplification. Nkt275 datasheet, equivalent, cross reference search. N channel mos type high speed, high voltage switching, chopper regulator, dcdc converter and motor drive applications, k2750 datasheet, k2750 circuit, k2750 data sheet. It is designed for general purpose high voltage applications and is housed in the sot. Npn highvoltage transistor mmbta42 thermal characteristics note 1.
Ne85633r25a transistor npn 1ghz sot23 nec datasheet. Npn transistor on semiconductors e2poweredge family of low vcesat transistors are miniature surface mount devices featuring ultra low saturation voltage vcesat and high current gain capability. Necs npn silicon high ne681 frequency transistor series. If your question requires design or troubleshooting information, please email email protected for a prompt reply. A643 datasheet, a643 pdf, a643 data sheet, datasheet, data sheet, pdf. Power dissipation 25c dc current gain hfe 4 a vce sat 1. Mmbt5551m3 npn high voltage transistor the mmbt5551m3 device is a spin.
Npn transistor fast switching speed applications switching regulators motor control high frequency and efficency converters description the bux80 is a silicon multiepitaxial mesa npn transistor in jedec to3 metal case, particularly. Description nchannel mos field effect power transistor. Limited quantity available, new old stock, not for export. These transistors are subdivided into three groups q, r and s according to their dc current gain. Tone decoderphaselocked loop ne567se567 2002 sep 25 2 8530124 28984 description the ne567se567 tone and frequency decoder is a highly stable phaselocked loop with synchronous am lock detection and power output circuitry. Lead times for out of stock back order and nonstocked items are increasing due to our suppliers operating with reduced staffing levels.
Thermal data rthjcase thermal resistance junctioncase max 1. Free packages are available maximum ratings rating symbol value unit collector. Applications telephony and professional communication equipment. Inchange semiconductor product specification silicon npn power transistors 2sd745745a745b description with mt200 package complement to type 2sb705705a705b applications audio frequency power amplifier suitable for output stages of 60120w audio amplifiers and voltage regulators pinningsee fig. Diodes and transistors pdf 28p this note covers the following topics. Each transistor is tested for gain and leakage according to geofex technology of the fuzz face specifications. The transistors are ideal for the vintage fuzz face configuration. Unit ices collector cutoff current vbe 0 vce 800 v vce 800 v tcase 125 oc 1 3 ma ma iebo emitter cutoff current ic 0 vbe 10 v 10 ma.
Output power 10 w pep gain at 900 mhz, at 2200 mhz efficiency at 900 mhz, at 2200 mhz dim 31 dbc at 900 mhz, 28 dbc at 2200 mhz easy power control excellent ruggedness high power gain excellent thermal stability designed for broadband. D absolute maximum rating parameter symbol ratings unit collectorbase voltage v cbo220 v collectoremitter voltage v ceo200 v. Inchange semiconductor product specification silicon npn power transistors 2sd745745a745b description with mt200 package complement to type 2sb705705a705b applications audio frequency power amplifier suitable for output stages of 60120w audio amplifiers and voltage regulators pinningsee. Get your questions answered from other customers who own this product or have experience with it. Terminal dimensions within this zone are uncontrolled to allow. K1507 datasheet, k1507 pdf, k1507 data sheet, datasheet, data sheet, pdf. On special request, these transistors can be manufactured in different pin configurations. Description npn highvoltage transistor in a sot323 plastic package. The fja09 is a 700 v 12 a npn silicon epitaxial planar transistor the fja09 is designed for high speed switching applications which utilizes the industry standard to3p package offering flexibility in design and excellent power dissipation. An aversion with ebc pinning instead of ecb is available on request. Marking of electronic components, smd codes kn, kn, kna. Offer tn3019 ns from kynix semiconductor hong kong limited. Offer ksc2330ota fairchild from kynix semiconductor hong kong limited.
Pinning pin description 1 emitter 2 collector, connected to mounting base 3 base. Nkt275 transistor datasheet pdf, nkt275 equivalent. Typical 2tone performance at a supply voltage 26 v and idq of 85 ma. Home electronics transistors npn medium power transistors covid19 coronavirus update. Nec catalog first page, datasheet, datasheet search, data sheet, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, semiconductors. Pinning pin description 1 base 2 emitter 3 collector fig. Applications for use in video output stages of black and white and colour television receivers. This is a pdf format of the well known hardware pinout book, which covers various computer, electrical and electronic item pinouts. Transistors with builtin resistor publication date. Symbol parameter conditions value unit rth ja thermal resistance from junction to ambient note 1 500 kw symbol parameter conditions min. The bipolar junction transistor bjt, the first type of transistor to be massproduced, is a combination of two junction diodes, and is formed of either a thin layer of ptype semiconductor sandwiched between two ntype semiconductors an npn transistor, or a thin layer of ntype semiconductor sandwiched between two ptype semiconductors a.
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